RESUMEN
We show that in spatially resolved reflectance anisotropy (RA) spectrometers, off-axis optical rays introduce a spurious signal component that cannot be addressed by optical alignment. Such a component is associated with the difference between the reflectivities s and p of the sample and depends, in a complex manner, on the incidence position of the incident light on the surface of the sample. We report a data-reduction procedure to easily identify and remove spurious RA signals associated with the off-axis optical rays, based on the singular value decomposition analysis of spatially resolved RA spectra. We validated this approach by developing a spatially resolved RA spectrometer based on an 8 × 8 multi-anode photomultiplier (PMT). The PMT allowed the use of phase-sensitive detection techniques to enhance the signal-to-noise ratio, which is essential for the evaluation of the proposed data reduction procedure.
RESUMEN
Reflectance anisotropy spectroscopy (RAS) is a highly sensitive optical probe for the real-time study of the epitaxial growth of zincblende semiconductors. Here we report on (1) non-equilibrium RAS spectra acquired in real time during the homoepitaxial growth of GaAs, and (2) RAS spectra for GaAs surfaces under equilibrium with several arsenic overpressures. We show that in both cases RAS spectra can be decomposed into two basic components, each with a characteristic line shape. We further show that both dynamic and equilibrium RAS spectra are described by the same pair of basic components. We conclude that the time evolution of non-equilibrium RAS spectra acquired during the epitaxial growth can be described in terms of RAS spectra for equilibrium surfaces. The results reported here should be useful for the interpretation of the physics underlying the rapid time evolution of dynamic RAS spectra during the first monolayer growth. Thus, we show that RAS constitutes a valuable tool for the study of epitaxial growth mechanisms.
RESUMEN
We present a spectroscopic ellipsometry study of Mo-doped VO2 thin films deposited on silicon substrates for the mid-infrared range. The dielectric functions and conductivity were extracted from analytical fittings of Ψ and Δ ellipsometric angles showing a strong dependence on the dopant concentration and the temperature. Insulator-to-metal transition (IMT) temperature is found to decrease linearly with increasing doping level. A correction to the classical Drude model (termed Drude-Smith) has been shown to provide excellent fits to the experimental measurements of dielectric constants of doped/undoped films and the extracted parameters offer an adequate explanation for the IMT based on the carriers backscattering across the percolation transition. The smoother IMT observed in the hysteresis loops as the doping concentration is increased, is explained by charge density accumulation, which we quantify through the integral of optical conductivity. In addition, we describe the physics behind a localized Fano resonance that has not yet been demonstrated and explained in the literature for doped/undoped VO2 films.
RESUMEN
Photoreflectance-difference (PR/PRD) and reflectance-difference (RD) spectroscopies employ synchronic detection usually with lock-in amplifiers operating at moderate (200-1000 Hz) and high (50-100 KHz) modulation frequencies, respectively. Here, we report a measurement system for these spectroscopies based on a multichannel CCD spectrometer without a lock-in amplifier. In the proposed scheme, a typical PRD or RD spectrum consists of numerical subtractions between a thousand CCD captures recorded, while a photoelastic modulator is either operating or inhibited. This is advantageous and fits the slow response of CCD detectors to high modulation frequencies. The resulting spectra are processed with Savitzky-Golay filtering and compared well with those measured with conventional scanning systems based on lock-in amplifiers.
RESUMEN
We describe a microreflectance difference (microRD) spectrometer based on a charge coupled device (CCD), in contrast to most common RD spectrometers that are based on a photomultiplier or a photodiode as a light detector. The advantage of our instrument over others is the possibility to isolate the RD spectrum of specific areas of the sample; thus topographic maps of the surface can be obtained. In our setup we have a maximum spatial resolution of approximately 2.50 microm x 2.50 microm and a spectral range from 1.2 to 5.5 eV. To illustrate the performance of the spectrometer, we have measured strains in mechanically polished GaAs (001) single crystals.
